Transfer efficiency in ballistic electron emission microscopy taking diffraction of emitted hot electrons into accountMACHIDA, Nobuya; SATOH, Shunsuke; FURUYA, Kazuhito et al.Surface science. 2006, Vol 600, Num 21, pp 4843-4847, issn 0039-6028, 5 p.Article

Fabrication of InP/InGaAs DHBTs with Buried SiO₂ Wires : Fundamentals and Applications of Advanced Semiconductor DevicesTAKEBE, Naoaki; KOBAYASHI, Takashi; SUZUKI, Hiroyuki et al.IEICE transactions on electronics. 2011, Vol 94, Num 5, pp 830-834, issn 0916-8524, 5 p.Article

Current gain and voltage gain in hot electron transistors without base layerMIYAMOTO, Yasuyuki; NAKAGAWA, Ryo; KASHIMA, Issei et al.IEICE transactions on electronics. 2006, Vol 89, Num 7, pp 972-978, issn 0916-8524, 7 p.Conference Paper

Al growth on Si(111)(√3×√3)-Ga surfaces at room temperatureMAEHASHI, K; KATSUKI, H; NAKASHIMA, H et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 997-1000, issn 0021-4922, 1Conference Paper

Characterization of deep levels in Si-doped In_xAl_1-xAs layers grown by molecular beam epitaxyMALININ, A; TOMOZAWA, H; HASHIZUME, T et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1138-1142, issn 0021-4922, 1Conference Paper

Control of As precipitation in low-temperature GaAs by electronic and isoelectronic delta dopingTZYY MING CHENG; CHUN YEN CHANG; JIN HUA HUANG et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1185-1189, issn 0021-4922, 1Conference Paper

Counter doped N-channel MOSFETs: mobility improvement and reverse short channel effect enhancementPLOEG, E. P. V; NODA, H; UMEDA, K et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 878-881, issn 0021-4922, 1Conference Paper

Disordering of CdZnSe/ZnSe strained layer superlattices by ion implantationYOKOGAWA, T; MERZ, J; LUO, H et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1159-1161, issn 0021-4922, 1Conference Paper

Elastic scattering and depletion effects on current-voltage characteristics of gated resonant tunneling diodesLEE, C.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1236-1240, issn 0021-4922, 1Conference Paper

Electroluminescence of ballistic and phonon emitting electrons in the p-type base of AlGaAs/GaAs HBT structuresFUKAI, Y. K; FURUTA, T; ISHIBASHI, T et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1208-1212, issn 0021-4922, 1Conference Paper

Electron beam patterning mechanism of GaAs oxide mask layers used in in situ electron beam lithographyTANAKA, N; LOPEZ, M; MATSUYAMA, I et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1194-1198, issn 0021-4922, 1Conference Paper

Extremely high selective etching of porous Si for single etch-stop bond-and-etch-back silicon-on-insulatorSAKAGUCHI, K; SATO, N; YAMAGATA, K et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 842-847, issn 0021-4922, 1Conference Paper

H₂O₂ decomposition and its impact on silicon surface roughening and gate oxide integritySCHMIDT, H. F; MEURIS, M; MERTENS, P. W et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 727-731, issn 0021-4922, 1Conference Paper

Low temperature chemical vapor deposition of high quality SiO₂ film using helicon plasma sourceNISHIMOTO, Y; TOKUMASU, N; MAEDA, K et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 762-766, issn 0021-4922, 1Conference Paper

Metalorganic vapor phase epitaxy growth of Be-doped InP using bismethylcyclopentadienyl-beryliumKIMURA, T; ISHIDA, T; SONODA, T et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1106-1108, issn 0021-4922, 1Conference Paper

New P-MOSFET hot-carrier degradation model for bi-directional operationSHIMIZU, S; TANIZAWA, M; KUSUNOKI, S et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 889-894, issn 0021-4922, 1Conference Paper

Numerical prediction for 2 GHz RF amplifier of SOI power MOSFETOMURA, I; NAKAGAWA, A.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 827-830, issn 0021-4922, 1Conference Paper

Photoluminescence from a silicon quantum well formed on separation by implanted oxygen substrateTAKAHASHI, Y; FURUTA, T; ONO, Y et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 950-954, issn 0021-4922, 1Conference Paper

Suppression of leakage current in n-channel polysilicon thin-film transistors using NH₃ annealingDEUK-SUNG CHOI; SUNG-HOI HUR; GI-YOUNG YANG et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 882-885, issn 0021-4922, 1Conference Paper

Two-dimensional analytical modeling of the source/drain engineering influence of short-channel effects in SOI MOSFET'sJOACHIM, H.-O; YAMAGUCHI, Y; INOUE, Y et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 822-826, issn 0021-4922, 1Conference Paper

Vertical transport properties of photogenerated carrier in InGaAs/GaAs strained multiple quantum wellsKITATANI, T; YAZAWA, Y; MINEMURA, J et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1358-1361, issn 0021-4922, 1Conference Paper

A model for threshold voltage shift under positive and negative high-field electron injection in complementary metal-oxide-semiconductor (CMOS) transistorsBROZEK, T; CHAN, Y. D; VISWANATHAN, C. R et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 969-972, issn 0021-4922, 1Conference Paper

Al-flow process with a 'cap-clamp' for sub-micron contact holesGIL-HEYUN CHOI; SANG-IN LEE; CHANG-SOO PARK et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1026-1029, issn 0021-4922, 1Conference Paper

Analysis of distributed feedback semiconductor laser-electroabsorption modulator integrated light source, including gain-coupled structureWEIMIN SI; YI LUO; DEJIE LI et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1260-1264, issn 0021-4922, 1Conference Paper

Bloch oscillations in semiconductor superlatticesROSKOS, H. G; WASCHKE, C; VICTOR, K et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1370-1375, issn 0021-4922, 1Conference Paper